View HMC463_351091.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MICROWAVE CORPORATION
v03.0304
HMC463
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz
Features
Gain: 14 dB Noise Figure: 2.5 dB @ 10 GHz P1dB Output Power: +19 dBm @ 10 GHz Supply Voltage: +5.0V @ 60 mA 50 Ohm Matched Input/Output 3.15 mm x 1.63 mm x 0.1 mm
1
AMPLIFIERS - CHIP
Typical Applications
The HMC463 is ideal for: * Telecom Infrastructure * Microwave Radio & VSAT * Military & Space * Test Instrumentation * Fiber Optics
Functional Diagram
General Description
The HMC463 is a GaAs MMIC PHEMT Low Noise AGC Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 14 dB of gain, 2.5 dB noise figure and 19 dBm of output power at 1 dB gain compression while requiring only 60 mA from a +5V supply. An optional gate bias (Vgg2) is provided to allow Adjustable Gain Control (AGC) of 10 dB typical. Gain flatness is excellent at 0.15 dB from 6 - 18 GHz making the HMC463 ideal for EW, ECM and RADAR applications. The HMC463 amplifier can easily be integrated into Multi-Chip-Modules (MCMs) due to its small size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).
Vgg2: Optional Gate Bias for AGC
Electrical Specifications, TA = +25 C, Vdd= 5V, Idd= 60 mA*
Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) (Vdd= 5V, Vgg1= -0.9V Typ.) 16 12 Min. Typ. 2.0 - 6.0 15 1.0 0.015 3.0 12 11 19 21 31 60 13 0.025 4.0 12 Max. Min. Typ. 6.0 - 18.0 14 0.15 0.015 2.5 15 12 16 20 28 60 11 0.025 3.7 12 Max. Min. Typ. 18.0 - 20.0 14 0.15 0.015 3.5 14 10 14 19 26 60 0.025 4.0 Max. Units GHz dB dB dB/ C dB dB dB dBm dBm dBm mA
* Adjust Vgg1 between -1.5 to -0.5V to achieve Idd= 60 mA typical.
1 - 98
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v03.0304
MICROWAVE CORPORATION
HMC463
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz
GaAs MMIC PUMPED MIXER Gain & Return LossSUB-HARMONICALLY Gain vs. Temperature
20 15 10 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 24 FREQUENCY (GHz)
S21
17 - 25 GHz
20 18 16
1
AMPLIFIERS - CHIP
1 - 99
14 GAIN (dB) 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz)
+25C +85C -55C
S11 S22
Input Return Loss vs. Temperature
0 INPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz)
+25C +85C -55C
Output Return Loss vs. Temperature
0 OUTPUT RETURN LOSS (dB)
+25C +85C -55C
-5
-10
-15
-20 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0 REVERSE ISOLATION (dB) -10 -20 -30 -40 -50 -60 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz)
+25C +85C -55C
Noise Figure vs. Temperature
10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz)
+25C +85C -55C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v03.0304
MICROWAVE CORPORATION
HMC463
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz
1
AMPLIFIERS - CHIP
GaAs MMIC SUB-HARMONICALLY Psat vs. Temperature PUMPED MIXER P1dB vs. Temperature
25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz)
+25C +85C -55C
17 - 25 GHz
25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 0 2 4
P1dB (dBm)
Psat (dBm)
+25C +85C -55C
20
22
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
Output IP3 vs. Temperature
35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 0 2 4
Gain, Power & Noise Figure vs. Supply Voltage @ 10 GHz, Fixed Vgg1
22 21 GAIN (dB), P1dB (dBm) 20 19 18 17 16 15 14 13 12
Gain P1dB Noise Figure
5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 4.75 5 Vdd (Vdc) 5.25 5.5 NOISE FIGURE (dB)
OIP3 (dBm)
+25C +85C -55C
6
8
10
12
14
16
18
20
22
4.5
FREQUENCY (GHz)
Gain, P1dB & Output IP3 vs. Control Voltage @ 10 GHz
32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -1.2 GAIN (dB), P1dB (dBm), OIP3 (dBm)
Noise Figure & Supply Current vs. Control Voltage @ 10 GHz
70 65 60 55 Idd (mA) 50 45 40 35
Gain P1dB OIP3 Noise Figure Idd
5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 -1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1 NOISE FIGURE (dB)
30 25 20 1
-1
-0.8 -0.6 -0.4 -0.2
0
0.2
0.4
0.6
0.8
-1.2
Vgg2 (Vdc)
Vgg2 (Vdc)
1 - 100
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v03.0304
MICROWAVE CORPORATION
HMC463
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz
Gain @ Several Control Voltages
20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 0 2 4 6
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1) Gate Bias Voltage (Vgg2)(AGC) RF Input Power (RFin)(Vdd = +5.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 C) (derate 50 mW/C above 85 C) Thermal Resistance (channel to die bottom)
20 22
+9.0 Vdc -2.0 to 0 Vdc
1
AMPLIFIERS - CHIP
1 - 101
GAIN (dB)
(Vdd -9.0) Vdc to +2.0 Vdc +23 dBm 175 C 4.5 W 20 C/W -65 to +150 C -55 to +85 C
Vgg2=-1.3 V Vgg2=-1.2 V Vgg2=-1.1 V Vgg2=-1.0 V
Vgg2=-0.9 V Vgg2=-0.6 V Vgg2=-0.4 V Vgg2=0 V
8
10
12
14
16
18
Storage Temperature Operating Temperature
FREQUENCY (GHz)
Typical Supply Current vs. Vdd
Vdd (V) +4.5 Idd (mA) 58 60 62
Outline Drawing
+5.0 +5.5
NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v03.0304
MICROWAVE CORPORATION
HMC463
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz
1
AMPLIFIERS - CHIP
Pad Descriptions
Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms from 2.0 - 20.0 GHz Interface Schematic
2
Vgg2
Optional gate control if AGC is required. Leave Vgg2 open circuited if AGC is not required.
3
Vdd
Power supply voltage for the amplifier. External bypass capacitors are required
4
RFOUT
This pad is AC coupled and matched to 50 Ohms from 2.0 - 20.0 GHz
5
Vgg1
Gate control for amplifier. Adjust to achieve Idd= 60 mA.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
1 - 102
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v03.0304
MICROWAVE CORPORATION
HMC463
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz
Assembly Diagram
1
AMPLIFIERS - CHIP
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
1 - 103
v03.0304
MICROWAVE CORPORATION
HMC463
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz
1
AMPLIFIERS - CHIP
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical dieto-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
1 - 104
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v03.0304
MICROWAVE CORPORATION
HMC463
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz
Handling Precautions
Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
1
AMPLIFIERS - CHIP
1 - 105
Mounting
The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com

▲Up To Search▲

Price & Availability of HMC463

	To Download HMC463 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .